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HMC592
v01.0107
GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 10.0 - 13.0 GHz
1
AMPLIFIERS - CHIP
Typical Applications
The HMC592 is ideal for use as a power amplifier for: * Point-to-Point Radios * Point-to-Multi-Point Radios * Test Equipment & Sensors * Military End-Use * Space
Features
Saturated Output Power: +31 dBm @ 21% PAE Output IP3: +38 dBm Gain: 19 dB DC Supply: +7.0 V @ 750 mA 50 Ohm Matched Input/Output Die Size: 2.47 mm x 1.17 mm x 0.1 mm
Functional Diagram
General Description
The HMC592 is a high dynamic range GaAs PHEMT MMIC 1 Watt Power Amplifier which operates from 10 to 13 GHz. This amplifier die provides 19 dB of gain and +31 dBm of saturated power, at 21% PAE from a +7.0V supply. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into MultiChip-Modules (MCMs). All data is taken with the chip in a 50 ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of length 0.31mm (12 mils). For applications which require optimum OIP3, Idd should be set for 400 mA, to yield +38 dBm OIP3. For applications which require optimum output P1dB, Idd should be set for 750 mA, to yield +31 dBm Output P1dB.
Electrical Specifications, TA = +25 C, Vdd = +7V, Idd = 750 mA*
Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept Supply Current (Idd) [1] Adjust Vgg between -2 to 0V to achieve Idd= 750 mA typical. [2] Measurement taken at 7V @ 400mA, Pin / Tone = -15 dBm (IP3)[2] 28 16 Min. Typ. 10 - 13 19 0.05 10 12 31 31.2 38 750 800 Max. Units GHz dB dB/ C dB dB dBm dBm dBm mA
1 - 230
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC592
v01.0107
GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 10.0 - 13.0 GHz
Broadband Gain & Return Loss
30 25 20 RESPONSE (dB) 15
S21 S11 S22
Gain vs. Temperature
28 26 24 22 GAIN (dB) 20 18 16 14 12 10 8 6
+25C +85C -55C
1
AMPLIFIERS - CHIP
1 - 231
10 5 0 -5 -10 -15 -20 -25 7 8 9 10 11 12 13 14 15 FREQUENCY (GHz)
9
9.5
10
10.5
11
11.5
12
12.5
13
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
Output Return Loss vs. Temperature
0
-5 RETURN LOSS (dB) RETURN LOSS (dB)
+25C +85C -55C
-5
-10
-10
-15
-15
+25C +85C -55C
-20
-20
-25 8 9 10 11 12 13 14 FREQUENCY (GHz)
-25 8 9 10 11 12 13 14 FREQUENCY (GHz)
P1dB vs. Temperature
33 32 31 30 P1dB (dBm) 29 28 27 26 25 24 23 9 9.5 10 10.5 11 11.5 12 12.5 13 FREQUENCY (GHz)
+25C +85C -55C
Psat vs. Temperature
33 32 31 30 Psat (dBm) 29 28 27 26 25 24 23 9 9.5 10 10.5 11 11.5 12 12.5 13 FREQUENCY (GHz)
+25C +85C -55C
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC592
v01.0107
GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 10.0 - 13.0 GHz
1
AMPLIFIERS - CHIP
P1dB vs. Current
33 32 31 30 P1dB (dBm) 29 28 27 26 25 24 23 9 9.5 10 10.5 11 11.5 12 12.5 13 FREQUENCY (GHz)
400mA 500mA 600mA 700mA 750mA
Psat vs. Current
33 32 31 30 Psat (dBm) 29 28 27 26 25 24 23 9 9.5 10 10.5 11 11.5 12 12.5 13 FREQUENCY (GHz)
400mA 500mA 600mA 700mA 750mA
Output IP3 vs. Temperature 7V @ 400 mA, Pin/Tone = -15 dBm
44 42 40 38 IP3 (dBm) 36 34 32 30 28 26 24 9 9.5 10 10.5 11 11.5 12 12.5 13 FREQUENCY (GHz)
+25C +85C -55C
Power Compression @ 8 GHz, 7V @ 750 mA
35 Pout(dBm), GAIN (dB), PAE(%) 30 25 20 15 10 5 0 -14 -12 -10 -8 -6 -4 -2
Pout Gain PAE
0
2
4
6
8 10 12 14 16
INPUT POWER (dBm)
Output IM3, 7V @ 400 mA
90 80 70 60 IM3 (dBc) 50 40 30 20 10 0 -20 -18 -16 -14 -12 -10 -8
9 GHz 10 GHz 11 GHz 12 GHz 13 GHz
Output IM3, 7V @ 750 mA
90 80 70 60 IM3 (dBc) 50 40 30 20 10 0 -20 -18 -16 -14 -12 -10 -8
9 GHz 10 GHz 11 GHz 12 GHz 13 GHz
-6
-4
-2
0
2
4
6
8
-6
-4
-2
0
2
4
6
8
Pin/Tone (dBm)
Pin/Tone (dBm)
1 - 232
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC592
v01.0107
GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 10.0 - 13.0 GHz
Gain & Power vs. Supply Current @ 8 GHz
36 GAIN (dB), P1dB (dBm), Psat(dBm) 32 28 24 20 16 12 400
Gain P1dB Psat
Gain & Power vs. Supply Voltage @ 8 GHz
36 32 28 24 20 16 12 6.5
Gain P1dB Psat
1
AMPLIFIERS - CHIP
1 - 233
450
500
550
600
650
700
750
GAIN (dB), P1dB (dBm), Psat(dBm)
7 Vdd SUPPLY VOLTAGE (Vdc)
7.5
Idd SUPPLY CURRENT (mA)
Reverse Isolation vs. Temperature
0 -10
+25C +85C -55C
Power Dissipation
6 5.75 5.5 Power Dissipation (W) 5.25 5 4.75 4.5 4.25 4 3.75 3.5 3.25 3 -14 -12 -10 -8
9 GHz 10 GHz 11 GHz 12 GHz 13 GHz
-20 ISOLATION (dB) -30 -40 -50 -60 -70 -80 9 9.5 10 10.5 11
11.5
12
12.5
13
-6
-4
-2
0
2
4
6
8
10 12 14
FREQUENCY (GHz)
INPUT POWER (dBm)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC592
v01.0107
GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 10.0 - 13.0 GHz
Typical Supply Current vs. Vdd
Vdd (V) Idd (mA) 757 750 745
1
AMPLIFIERS - CHIP
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) Gate Bias Voltage (Vgg) RF Input Power (RFin)(Vdd = +7.0 Vdc) Channel Temperature Continuous Pdiss (T= 85 C) (derate 62.7 mW/C above 85 C) Thermal Resistance (channel to die bottom) Storage Temperature Operating Temperature +8 Vdc -2.0 to 0 Vdc +15 dBm 175 C 5.64 W 15.94 C/W -65 to +150 C -55 to +85 C
Outline Drawing
+7.0 +7.5
+6.5
Note: Amplifier will operate over full voltage ranges shown above Vgg adjusted to achieve Idd = 750 mA at +7.0V
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS
Die Packaging Information [1]
Standard GP-1 Alternate [2]
[1] Refer to the "Packaging Information" section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation.
NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004" 3. TYPICAL BOND PAD IS .004" SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 8. OVERALL DIE SIZE .002
1 - 234
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC592
v01.0107
GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 10.0 - 13.0 GHz
Pad Descriptions
Pad Number 1 Function RFIN Description This pad is AC coupled and matched to 50 Ohms. Interface Schematic
1
Gate control for amplifier. Adjust to achieve Idd of 750 mA. Please follow "MMIC Amplifier Biasing Procedure" Application Note. External bypass capacitors of 100 pF and 0.1 F are required.
2, 4, 6
Vgg 1-3
3, 5, 7
Vdd 1-3
Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF and 0.1 F are required.
8
RFOUT
This pad is AC coupled and matched to 50 Ohms.
Die Bottom
GND
Die bottom must be connected to RF/DC ground.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
1 - 235
AMPLIFIERS - CHIP
HMC592
v01.0107
GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 10.0 - 13.0 GHz
1
AMPLIFIERS - CHIP
Assembly Diagram
1 - 236
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC592
v01.0107
GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 10.0 - 13.0 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be located as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils).
0.102mm (0.004") Thick GaAs MMIC
Wire Bond 0.076mm (0.003")
1
AMPLIFIERS - CHIP
1 - 237
RF Ground Plane
0.127mm (0.005") Thick Alumina Thin Film Substrate Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup.
0.102mm (0.004") Thick GaAs MMIC
Wire Bond 0.076mm (0.003")
RF Ground Plane
0.150mm (0.005") Thick Moly Tab 0.254mm (0.010") Thick Alumina Thin Film Substrate Figure 2.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com

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